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GT30J101 Datasheet, Toshiba Semiconductor

GT30J101 igbt equivalent, silicon n-channel igbt.

GT30J101 Avg. rating / M : 1.0 rating-110

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GT30J101 Datasheet

Application

Unit: mm
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* The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Volta.

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GT30J101 Page 1 GT30J101 Page 2 GT30J101 Page 3

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